| PART |
Description |
Maker |
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
| SGW10N60 SGB10N60 |
Fast S-igbt in Npt-technology
|
Infineon Technologies Corporation
|
| SGD02N120 SGP02N120 SGB02N120 SGI02N120 |
Fast S-IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SGB15N12007 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
|
| SKB02N12007 SKB02N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKP02N120 SKB02N120 |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKB02N6007 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
